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  • Summary & Details

Breakthrough in the Fabrication of the World’s Largest Twin-Free (111) Single-Crystal Diamond Free-Standing Substrate (30 mm × 30 mm)

世界最大となる30 mm×30 mmサイズの双晶のない(111)単結晶ダイヤモンド自立基板の生産技術を開発

Detailed Information

Category(J)ホットトピックス

Translation

Category(E)Hot Topics
Author(J)1) 金 聖祐, 2) 川又 友喜, 3) 長谷部 航平, 4) 小山 浩司, 5) 鈴木 真理
Author(E)1) Seong-Woo Kim, 2) Yuki Kawamata, 3) Kohei Hasebe, 4) Koji Koyama, 5) Mariko Suzuki
Affiliation(J)1) Orbray, 2) Orbray, 3) Orbray, 4) Orbray, 5) Orbray
Abstract(J)オフ角を有するサファイア基板上へのヘテロエピタキシャル成長により、30 mm角の自立型双晶フリー{111}ダイヤモンド成長に成功した。X線ロッキングカーブ測定の結果、{111}面における半値幅は94 arcsecであり、高い結晶品質を有することが確認された。さらに、{220}回折ピークに対するX線極点図は三回対称性を示し、双晶を含まない単結晶であることが示唆された。サファイア基板のオフ角およびオフ方向依存性について、検討の結果、サファイア基板の{0001}面に対して〈11-20〉方向へ傾斜させることにより、ステップフロー成長が促進されるとともに、{111}ダイヤモンドにおける〈11-2〉ステップ方向が配向整列することで、双晶形成が抑制されることが明らかとなった。

Translation

Abstract(E)Freestanding 30 mm square twin-free {111} diamond films were obtained by heteroepitaxial growth on highly misoriented sapphire substrates. X-ray rocking curve revealed high crystal quality of the diamond with full width at half maximum of 94 arcsec for {111} plane. X-ray pole figure of {220} diffraction peaks exhibited threefold symmetry, suggesting the single crystallinity without twinning. Results of systematic investigation of off-angle and off-direction dependencies demonstrated that large misorientation toward <11-20> of {0001} plane sapphire substrate not only promotes step-flow growth but also suppresses twin formation by aligning <11-2> step direction of {111} diamond.

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