Development of Hyperspectral Imaging Method for Analysis of GaN and SiC Semiconductor Devices
- Delivery
- Available on this site
- Format
- Price
- Non-members (tax incl.)：￥1,100 Members (tax incl.)：￥880
- Publication code
- 20215209
- Paper/Info type
- Proceedings (Spring)
No.47-21
- Pages
- 1-4(Total 4 p)
- Date of publication
- May 2021
- Publisher
- JSAE
- Language
- English
- Event
- 2021 JSAE Annual Congress (Spring)[Online Meeting]
Detailed Information
| Author(E) | 1) Milikofu Olga, 2) Myalitsin Anton |
|---|---|
| Affiliation(E) | 1) Nissan ARC, 2) Nissan ARC |
| Abstract(J) | パワーエレクトロニクスについて、材料研究からデバイス製造までのどの段階においても、詳細な材料分析は不可欠である。本発表では、性能や寿命に影響を及ぼす、構造や応力、ドーピングの均質性、欠陥密度などの評価法として、非破壊・非接触・高速な光ルミネッセンス及びラマンイメージング法を適用した事例を紹介する。 Translation |
| Abstract(E) | Power electronics is key factor for progress of hybrid and electric cars, and transition to sustainable mobility. Detailed material analysis is required at each step from material research to device manufacturing. Non-contact, fast method using photoluminescence and Raman imaging has been developed to characterize device structure, stress, homogeneity of doping and defect density, which could affect device performance and lifetime. |
