Transient Thermal Analysis Model Creation Method for Semiconductor Devices DSRC Model Creation Method
半導体素子の過渡熱解析モデル作成手法 DSRCモデル作成方法
- Delivery
- Available on this site
- Format
- Price
- Non-members (tax incl.):¥1,100 Members (tax incl.):¥880
- Publication code
- 20225067
- Paper/Info type
- Proceedings (Spring)
No.15-22
- Pages
- 1-3(Total 3 p)
- Date of publication
- May 2022
- Publisher
- JSAE
- Language
- Japanese
- Event
- 2022 JSAE Annual Congress (Spring)
Detailed Information
Author(J) | 1) 安井 龍太, 2) 篠田 卓也, 3) 中溝 裕己, 4) 武井 春樹, 5) 袁 群, 6) 中嶋 達也 |
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Author(E) | 1) Ryuta Yasui, 2) Takuya Shinoda, 3) Hiroki Nakamizo, 4) Haruki Takei, 5) Qun Yuan, 6) Tatsuya Nakajima |
Affiliation(J) | 1) 東京工業大学, 2) デンソー, 3) 東京工業大学, 4) Siemens, 5) Siemens, 6) IDAJ |
Affiliation(E) | 1) Tokyo Institute of Technology, 2) DENSO, 3) Tokyo Institute of Technology, 4) Siemens, 5) Siemens, 6) IDAJ |
Abstract(J) | 過渡熱解析に対応するため、以前よりデータシートの過渡熱抵抗特性を熱回路網で表現するDSRCモデルと、実測の過渡熱抵抗特性を熱回路網で表現するDNRCモデルが提案されてきた。本報では、DSRCモデルを作成する手順を示すとともに、モデル作成時の実装環境やトポロジが解析精度に及ぼす影響を示す。 Translation |
Abstract(E) | In recent years, not only heat transfer analysis in steady state but also transient thermal analysis is required according to the operation of the circuit. In order to correspond to transient thermal analysis, two models such as a DSRC model using a data sheet and a DNRC model using measured values, expressing transient thermal resistance characteristics in a thermal network have been proposed so far. In this report, we show the know-how and procedures for creating the DSRC model, and the influence of the semiconductor element mounting environment at the time of model creation and the influence of the model topology on the analysis accuracy. |