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Summary & Details

Design of Semiconductor/Insulator Interfaces in SiC Trench MOSFETs to Improve Power Efficiency of Electric/Hybrid Vehicles

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Format: PDF

Price: Non-members (tax incl.)：￥1,100 Members (tax incl.)：￥880

Publication code: 20214361

Paper/Info type: Other International Conferences

No.H2.1

Pages: 1-4(Total 4 p)

Date of publication: May 2021

Publisher: JSAE

Language: English

Event: International Electric Vehicle Technology Conference EVTeC 2021 [Online Meeting]

Detailed Information

Category(E)	Power Semiconductor and Packaging Technologies
Author(E)	1) Katsuhiro Kutsuki, 2) Yukihiko Watanabe
Affiliation(E)	1) TOYOTA CENTRAL R&D LABS., Inc., 2) TOYOTA CENTRAL R&D LABS., Inc.
Abstract(E)	This study demonstrates the factors limiting the channel mobility in SiC trench MOSFETs in order to improve the power efficiency of electric/hybrid vehicles. Previously proposed analysis methods of the channel mobility are adopted to evaluate the effects of the trench angle and surface morphology of trench sidewalls on the channel mobility. When the trench angle is close to 90°, the surface is atomically flat, or both are true, the channel mobility increases. The increase could be caused by the suppression of Coulomb scattering attributed to dangling bonds at SiC surface of trench sidewalls.

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