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Summary & Details

High Performance and Reliable Si Power Devices with double side Cu plate

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Format: PDF

Price: Non-members (tax incl.)：￥1,100 Members (tax incl.)：￥880

Publication code: 20214363

Paper/Info type: Other International Conferences

No.H2.3

Pages: 1-4(Total 4 p)

Date of publication: May 2021

Publisher: JSAE

Language: English

Event: International Electric Vehicle Technology Conference EVTeC 2021 [Online Meeting]

Detailed Information

Category(E)	Power Semiconductor and Packaging Technologies
Author(E)	1) Tatsuya Ohguro, 2) Takako Motai, 3) Hitoshi Kobayashi, 4) Takuma Hara, 5) Shinichi Umekawa
Affiliation(E)	1) Toshiba Electronic Devices & Storage Corporation, 2) Toshiba Electronic Devices & Storage Corporation, 3) Toshiba Electronic Devices & Storage Corporation, 4) Toshiba Electronic Devices & Storage Corporation, 5) Toshiba Electronic Devices & Storage Corporation
Abstract(E)	In this work, we have developed vertical Si power MOSFETs with high performance and high reliability by using Cu double side plating technology. 20 μm thick Cu plating layers are formed on both sides of devices with 50 μm thick Si substrate. In this structure, even though Si substrate is thinner, Safety Operating Area (SOA) is wider and the warpage of chip is smaller thanks to front and back side thick Cu plating layers because thick Cu film has higher thermal conductivity and larger heat capacity.

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