Effects of crystalline defects on degradation of SiC devices
- Delivery
- Available on this site
- Format
- Price
- Non-members (tax incl.)：￥1,100 Members (tax incl.)：￥880
- Publication code
- 20214364
- Paper/Info type
- Other International Conferences
No.H2.4
- Pages
- 1-4(Total 4 p)
- Date of publication
- May 2021
- Publisher
- JSAE
- Language
- English
- Event
- International Electric Vehicle Technology Conference EVTeC 2021 [Online Meeting]
Detailed Information
| Category(E) | Power Semiconductor and Packaging Technologies |
|---|---|
| Author(E) | 1) Masashi Kato |
| Affiliation(E) | 1) Nagoya Institute of Technology |
| Abstract(E) | Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) are promising for power devices in electric and hybrid electric vehicles. However, at present, reliability of SiC MOSFETs is still an important issue to be solved. One of the origins for degradation of SiC MOSFETs performance is expansion of basal plane dislocations (BPDs) to single Shockley stacking faults (1SSF). The expansion of 1SSFs proceeds to the epitaxial layer of SiC MOSFETs and 1SSFs act as resistive components and degrade MOSFET performance, and thus we need to suppress the expansion of BPDs. In this paper, we report on carrier recombination lifetime in 1SSF and SiC epitaxial layers to find the suppression methods of 1SSF expansion. |
