The forefront of development for power semiconductor materials and devices
パワー半導体材料・デバイス開発の最前線
- Delivery
- Available on this site
- Format
- Price
- Non-members (tax incl.):¥1,100 Members (tax incl.):¥880
- Publication code
- 20214518
- Paper/Info type
- Forum Text (Online)
No.21FORUM-17
- Pages
- 1-30(Total 30 p)
- Date of publication
- Jul 2021
- Publisher
- JSAE
- Language
- Japanese
- Event
- JSAE Forum 2021
Detailed Information
Author(J) | 1) 小出 康夫 |
---|---|
Author(E) | 1) Yasuo Koide |
Affiliation(J) | 1) 物質・材料研究機構 |
Affiliation(E) | 1) NIMS |
Abstract(J) | 省エネルギー化のためのパワー半導体材料およびデバイス開発の現状と展望を解説する。 Translation |
Abstract(E) | The current status and future prospects of power semiconductor materials and device development for energy conservation will be explained. |